1 power transistors 2sD2544 silicon npn triple diffusion planar type for power amplification with high forward current transfer ratio n features l high foward current transfer ratio h fe l satisfactory linearity of foward current transfer ratio h fe l allowing supply with the radial taping n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 60 60 7 8 4 15 2 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ebo v ceo h fe1 * h fe2 v ce(sat) v be(sat) f t t on t stg t f conditions v cb = 60v, i e = 0 v eb = 7v, i c = 0 i c = 10ma, i b = 0 v ce = 2v, i c = 0.8a v ce = 2v, i c = 2a i c = 2a, i b = 50ma i c = 2a, i b = 50ma v ce = 10v, i c = 0.5a, f = 10mhz i c = 2a, i b1 = 50ma, i b2 = C50ma, v cc = 50v min 60 500 60 typ 1000 70 0.5 3.6 1.1 max 10 10 2000 0.5 1.5 unit m a m a v v v mhz m s m s m s * h fe1 rank classification rank q p h fe1 500 to 1200 800 to 2000 t c =25 c ta=25 c unit: mm 1:base 2:collector 3:emitter mt4 type package 1.0 10.0 0.2 0.55 0.1 2.5 0.2 2.5 0.2 4.2 0.2 13.0 0.2 2.5 0.2 18.0 0.5 solder dip 5.0 0.1 2.25 0.2 1.2 0.1 0.65 0.1 0.55 0.1 c1.0 90 c1.0 123 1.05 0.1 0.35 0.1
2 power transistors 2sD2544 p c ta i c v ce v be(sat) i c v ce(sat) i c h fe i c f t i c c ob v cb area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =2.0w) (1) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 8 6 2 5 7 4 1 3 t c =25?c i b =100ma 50ma 20ma 10ma 6ma 4ma 2ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.1 0.3 1 3 10 0.01 10 1 0.1 0.03 0.3 3 i c /i b =20 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 10 1 0.1 0.03 0.3 3 i c /i b =20 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 v ce =5v 25?c ?5?c t c =100?c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 1000 100 10 3 30 300 v ce =10v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 1 3 10 30 100 1 1000 100 10 3 30 300 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 i cp i c 10ms t=1ms dc non repetitive pulse t c =25?c collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2sD2544 r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 0.1 1 10 100 10000 1000 note: r th was measured at ta=25?c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
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